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  vdgs Datasheet PDF File

For vdgs Found Datasheets File :: 57    Search Time::1.39ms    
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    2SK3408

EIC discrete Semiconductors
NEC[NEC]
Part No. 2SK3408
OCR Text ... Current (pulse) Note1 VDSS vdgs VGSS ID(DC) ID(pulse) PT1 Note2 435 435 20 1.0 4.0 0.2 1.25 150 -55 to +150 V V V A A W W C C Gate Body Diode Gate Protection Diode Marking: XF Source Total Power Dissipation (TC = ...
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 60.29K  /  8 Page

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    MMBF170LT1 ON2093 ON2092

MOTOROLA[Motorola, Inc]
Part No. MMBF170LT1 ON2093 ON2092
OCR Text ...- Continuous Pulsed Symbol VDSS vdgs VGS VGSM ID IDM Value 60 60 20 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc CASE 318 - 08, STYLE 21 SOT- 23 (TO - 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA ...
Description TMOS FET Transistor
From old datasheet system

File Size 95.65K  /  4 Page

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    BS850

DIODES[Diodes Incorporated]
Part No. BS850
OCR Text ...ed Characteristic Symbol -VDSS -vdgs VGS -ID Pd Tj, TSTG Value 60 60 20 250 310 -65 to+150 Unit V V V mA mW C Gate-Source Voltage (pulsed) Drain Current (continuous) Power Dissipation @TC = 25C (Note 1) Operating and Storage Temperature ...
Description P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

File Size 69.08K  /  3 Page

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    Philips
Part No. BUK9907-40ATC
OCR Text ... System (IEC 60134). Symbol VDS vdgs VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 5 V; Figure 2 and 3 Tmb = 100 C; VGS = 5 V; Figure 2 IDM Ptot IDG(CL) IGS(...
Description TrenchPLUS logic level FET

File Size 140.30K  /  15 Page

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    Philips
Part No. BUK9907-55ATE
OCR Text ... System (IEC 60134). Symbol VDS vdgs VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 5 V; Figure 2 and 3 Tmb = 100 C; VGS = 5 V; Figure 2 IDM Ptot IGS(CL) drai...
Description TrenchPLUS logic level FET

File Size 154.25K  /  17 Page

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    2N7002

GE[General Semiconductor]
Part No. 2N7002
OCR Text ... Unit V V V mA W C C VDSS vdgs VGS ID Ptot Tj TS Ceramic Substrate 0.7mm; 2.5 cm2 area. Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage Drop (typ.) at VGS = 0, IF = 0.3 A, Tj = 25 C 4/98 ...
Description DMOS Transistors (N-Channel)

File Size 240.91K  /  5 Page

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    BS208

Diodes Incorporated
Part No. BS208
OCR Text ...herwise specified Symbol -VDSS -vdgs VGS -ID Pd Tj, TSTG Value 240 200 20 200 830 -55 to +150 Unit V V V mA mW C Characteristic Gate-Source-Voltage (pulsed) (Note 2) Drain-Current (continuous) Power Dissipation @TC = 25C (Note 1) Oper...
Description P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

File Size 64.58K  /  3 Page

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    BS208

GE Security, Inc.
General Semiconductor
Part No. BS208
OCR Text ... Unit V V V mA W C C -VDSS -vdgs VGS -ID Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage D...
Description DMOS Transistors (P-Channel)(P通道DMOS晶体

File Size 236.75K  /  5 Page

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    BS209

GE Security, Inc.
General Semiconductor
Part No. BS209
OCR Text ... Unit V V V mA mW C C -VDSS -vdgs VGS -ID Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage D...
Description DMOS Transistors (P-Channel)(P通道DMOS晶体

File Size 36.23K  /  2 Page

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    MMBF170LT1 MMBF170LT1G MMBF170LT3 MMBF170LT3G

ONSEMI[ON Semiconductor]
Part No. MMBF170LT1 MMBF170LT1G MMBF170LT3 MMBF170LT3G
OCR Text ...Continuous - Pulsed Symbol VDSS vdgs VGS VGSM ID IDM Value 60 60 20 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc 1 Unit http://onsemi.com 500 mA, 60 V RDS(on) = 5 W N-Channel 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipa...
Description Power MOSFET 500 mAmps, 60 Volts
Power MOSFET 500 mA, 60 V

File Size 62.42K  /  4 Page

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