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HI-SINCERITY MICROELECTRONICS, CORP.
HSMC CORP.
Hi-Sincerity Mocroelectronics Corp.
HSMC[Hi-Sincerity Mocroelectronics]
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| Part No. |
H02N60J H02N60 H02N60E H02N60F H02N60I
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| OCR Text |
...=1A)* Forward Transconductance (vds50v, ID=1A)* Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Dra... |
| Description |
N-Channel Power Field Effect Transistor N沟道功率场效应晶体管
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| File Size |
73.75K /
6 Page |
 View
it Online |
Download Datasheet
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HSMC CORP.
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectronics Corp.
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| Part No. |
H02N60SJ H02N60S H02N60SE H02N60SF H02N60SI
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| OCR Text |
...=1A)* Forward Transconductance (vds50v, ID=1A)* Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Dra... |
| Description |
N-Channel Power Field Effect Transistor
|
| File Size |
73.82K /
6 Page |
View
it Online |
Download Datasheet |
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|
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Hi-Sincerity Mocroelect...
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectronics Corp.
|
| Part No. |
H03N60 H03N60F H03N60E
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| OCR Text |
....5A)* Forward Transconductance (vds50v, ID=1.5A)* Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal D... |
| Description |
N-Channel Power Field Effect Transistor
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| File Size |
55.68K /
5 Page |
View
it Online |
Download Datasheet |
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vds50v Found Datasheets File :: 3 Search Time::2.688ms
Page :: | <1> | |
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