| PART |
Description |
Maker |
| 2SC5886 |
Transistor Silicon NPN Epitaxial Type High-Speed Swtching Applications DC-DC Converter Applications
|
TOSHIBA
|
| 2SA2097 |
High-Speed Swtching Applications DC-DC Converter Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4836 2SC4836F |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|叩| 20V的五（巴西）总裁| 5A条一（c）|园区
20V/5A Switch Applications
|
STMicroelectronics N.V.
SANYO[Sanyo Semicon Device]
|
| EMH130712 ENA1715A EMH1307 |
P-Channel Power MOSFET, -20V, -6.5A, 26mOhm, Single EMH8
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| EMH230812 EMH2308 |
P-Channel Power MOSFET, -20V, -3A, 85mOhm, Single EMH8
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| AF2301P AF2301PW AF2301PWA AF2301PWLA AF2301PWL |
V(ds): -20V; V(gs): -8V; -2.3A; 20V P-channel enchancement mode MOSFET
20V P-Channel Enhancement Mode MOSFET
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 RoHS Compliant: No
MS27467T21B41S
|
Anachip Corp
ETC
|
| 2SD826 2SD826G |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|叩| 20V的五（巴西）总裁| 5A条一（c）|26
3V,6V Strobe Applications
|
Microsemi, Corp.
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| ACBQ20T ACBQ20TTEB500K_101M ACCQ20TTEB500K_101M AC |
RC NETWORK, BUSSED, 1W, 24ohm, 20V, 0.000043uF, SURFACE MOUNT, 20
RC NETWORK, BUSSED, 1W, 110ohm, 20V, 0.000051uF, SURFACE MOUNT, 20 ROHS COMPLIANT
RC NETWORK, BUSSED, 1W, 11ohm, 20V, 0.000036uF, SURFACE MOUNT, 20 ROHS COMPLIANT
RC NETWORK, BUSSED, 1W, 12ohm, 20V, 0.0004uF, SURFACE MOUNT, 20 ROHS COMPLIANT
RC NETWORK, BUSSED, 1W, 100ohm, 20V, 0.000036uF, SURFACE MOUNT, 20 ROHS COMPLIANT
AC terminator networks
|
KOA SPEER ELECTRONICS INC
KOA Speer Electronics,Inc.
KOA Speer Electronics, Inc.
|
| IRF7301 IRF7301TR |
FERRITE BEAD BLM21A601S
Power MOSFET(Vdss=20V Rds(on)=0.050ohm)
Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| 2SJ144-GR |
Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
|
Toshiba Semiconductor
|
| KE3587-G |
N-channel:VDS=20V ID=4A Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., Ltd
|
