PART |
Description |
Maker |
IRF640N IRF640NL IRF640NS |
18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB N-CHANNEL POWER MOSFETS 200V, 18A, 0.15OHM N-Channel Power MOSFETs 200V, 18A, 0.15-Ohm
|
FAIRCHILD SEMICONDUCTOR CORP
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IRF240-243 IRF241 IRF242 IRF243 IRF641 IRF642 IRF6 |
N-Channel Power MOSFETs, 18A, 150-200V N沟道功率MOSFET8A条,15000 N-Channel Power MOSFETs/ 18A/ 150-200V N-Channel Power MOSFETs 18A 150-200V
|
Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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RFP18N10 RFM18N08 RFM18N10 RFP18N08 |
18A/ 80V and 100V/ 0.100 Ohm/ N-Channel Power MOSFETs 18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
IRFU110 IRFR110 FN3275 |
From old datasheet system 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs (IRFR110 / IRFU110) N-Channel Power MOSFETs
|
HARRIS SEMICONDUCTOR Intersil Corporation
|
MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
IRF640 |
18A 200V N CHANNEL POWER MOSFET
|
First Components Intern...
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UF640VL-T3P-T UF640VL-TA3-T |
18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|