| PART |
Description |
Maker |
| Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS)
From old datasheet system
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| KSD-T0D013-000 |
Power amplifier application
|
KODENSHI KOREA CORP.
|
| 2SJ20109 |
High-Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SK152909 |
High-Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SB688 |
HIGH POWER AMPLIFIER APPLICATION
|
UTC
|
| 2SK3497 |
High Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SC5344U |
Audio power amplifier application
|
KODENSHI KOREA CORP.
|
| STC3265 |
Audio Power Amplifier Application
|
AUK
|
| 2SC5344S |
NPN Silicon Transistor (Audio power amplifier application)
|
AUK[AUK corp]
|
| 2SJ200 |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT20D101 E001910 |
From old datasheet system
N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK201306 2SK2013 |
N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION
|
Toshiba Semiconductor
|
