| PART |
Description |
Maker |
| AP2532GY |
Low Gate Charge, Fast Switching Performance
2.4 A, 30 V, 0.13 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Advanced Power Electronics Corp.
|
| GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| AP6906GH-HF AP6906GH-HF-14 |
16.4 A, 60 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT, SDPAK-5
Simple Drive Requirement, Fast Switching Performance
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| SI7112DN |
N-Channel 30 V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7806BDN-T1-E3 SI7806BDN |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7840BDP-T1-E3 |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7850DP |
N-Channel 60-V (D-S) Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI7326DN-T1-E3 |
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7342DP |
N-Channel 30 V (D-S) Fast Switching MOSFET
|
Vishay
|
| SI4890DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| MC4458 |
N-Channel 30-V (D-S) MOSFET Fast switching speed
|
ShenZhen FreesCale Electronics. Co., Ltd
|
