| PART |
Description |
Maker |
| K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C |
512Kx8 bit Low Power CMOS Static RAM
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512K X 8 STANDARD SRAM, 55 ns, PDSO32
512K X 8 STANDARD SRAM, 70 ns, PDSO32
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
http://
|
| IDT6168LA15PI IDT6168LA IDT6168SA 6168LA_DS_9916 I |
5.0V, 4k X 4, CMOS, Asynchronous, Static RAM
From old datasheet system
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDSO20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 25 ns, CQCC20
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| K6R4008C1D |
512Kx8 Bit High Speed Static RAM(5.0V Operating)
|
Samsung semiconductor
|
| K6R4008V1C-C K6R4008V1C-C10 K6R4008V1C-C12 K6R4008 |
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
|
Samsung semiconductor
|
| M5M5256CP-55LL M5M5256CP-55XL M5M5256CP-70LL M5M52 |
262144-bit (32768 x 8-bit) CMOS static RAM, 55ns
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
262144-bit (32768 x 8-bit) CMOS static RAM, 70ns
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| KM684002 KM684002I-25 KM684002-17 KM684002-20 KM68 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| BS62LV4007 BS62LV4007TIP70 BS62LV4007EC BS62LV4007 |
Asynchronous 4M(512Kx8) bits Static RAM
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel
surface mount silicon Zener diodes
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| CXK5864BM-10L CXK5864B CXK5864BP-10L CXK5864BP-12L |
Series 400B sealed SMT sub-miniature rocker switch with variety of switching functions
8,192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM
8192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM
8,192字8位高速CMOS静态RAM
|
http://
SONY[Sony Corporation]
|
| M5M51016BRT-10LL M5M51016BRT-10L D98007 M5M51016BT |
1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
From old datasheet system
1048576-BIT(65536-16-1048576-BIT(65536-WORD WORDBY BY16-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| IDT6116LA IDT6116SA IDT6116SA20TDB IDT6116SA20SO I |
From old datasheet system
2K X 8 STANDARD SRAM, 35 ns, PDSO24 0.300 INCH, SOJ-24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDSO24
2K X 8 STANDARD SRAM, 35 ns, PDSO24 0.300 INCH, SOIC-24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 35 ns, PDSO24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 20 ns, PDIP24
|
http://
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM
(TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
