| PART |
Description |
Maker |
| RC28F128J3A-150 E28F128J3A-150 |
3 Volt Intel StrataFlash Memory 3伏特英特尔StrataFlash存储
3 Volt Intel StrataFlash Memory 8M X 16 FLASH 2.7V PROM, 150 ns, PDSO56
|
Intel, Corp.
http://
|
| GE28F128L18B85 JZ48F4000L0YTQ0 |
StrataFlash Wireless Memory 8M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
StrataFlash Wireless Memory 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
|
Intel, Corp.
|
| GE28F256L18T85 GE28F640L18T85 GE28F128L18T85 NZ48F |
StrataFlash Wireless Memory
|
Intel Corp.
Intel Corporation
|
| PC28F128P30 |
StrataFlash Embedded Memory
|
Intel Corporation
|
| 28F128P33 |
StrataFlash Embedded Memory
|
Intel
|
| 28F128J3A 28F320J3A |
(28FxxxJ3A) Intel StrataFlash Memory
|
Intel Corporation
|
| RC28F256 |
Intel StrataFlash Embedded Memory
|
Intel Corporation
|
| JS28F640P30T85 |
Intel StrataFlash Embedded Memory
|
Intel Corporation
|
| 28F640P3 PF48F3P0ZB00 PF48F2P0ZB00 PC48F0P0VB00 PC |
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Capacitance:16.2pF/ft; Conductor Material:Steel; Conductor Plating:Copper RoHS Compliant: Yes
Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:5m; Sensor Output Type:Relay; Leaded Process Compatible:No; Output Type:Relay; Peak Reflow Compatible (260 C):No; Contact Current Max:3A; Contact Rating:3A
Intel StrataFlash Embedded Memory 16M X 16 FLASH 1.8V PROM, 88 ns, PDSO56
Intel StrataFlash Embedded Memory 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
Intel StrataFlash Embedded Memory 8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
COAXIAL CABLE; COAXIAL RG/U TYPE:11; IMPEDANCE 75OHM CONDUCTOR SIZE AWG:14; NO. STRANDS X STRAND SIZE: SOLID; JACKET MATERIAL:POLYVINYLCHLORIDE (PVC); CONDUCTOR MATERIAL:STEEL; CONDUCTOR PLATING COPPER; JACKET COLOR:BLAC 英特尔StrataFlash嵌入式存储器
Intel StrataFlash Embedded Memory 16M X 16 FLASH 1.8V PROM, 88 ns, PBGA64
Intel StrataFlash Embedded Memory 英特尔StrataFlash嵌入式存储器
Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:20; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:20-41 英特尔StrataFlash嵌入式存储器
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle 英特尔StrataFlash嵌入式存储器
Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:43mm; Sensor Output Type:Relay; Leaded Process Compatible:No; Output Type:Relay; Peak Reflow Compatible (260 C):No; Contact Current Max:3A; Contact Rating:3A 英特尔StrataFlash嵌入式存储器
Strata Flash Memory / 1 Gbit P30 Family
CAP 0.01UF 63V 10% MET-POLY-BOX RAD5MM 7.5X6.5X2.5MM BULK 8M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:20-41
Intel StrataFlash Embedded Memory
|
Intel Corp.
http://
Intel, Corp.
Intel Corporation
|
| S29GL01GP12TFI023 S29GL128P13FAI023 S29GL01GP12FAI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 8M X 16 FLASH 3V PROM, 110 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
