| PART |
Description |
Maker |
| IRF7303 IRF7303TR |
Generation V Technology
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
|
International Rectifier
http://
|
| IRF7306 IRF7306TR IRF7306TRPBF |
Generation V Technology
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| IRF7303PBF IRF7303PBF-15 |
GENERATION V TECHNOLOGY
HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050ヘ )
HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050Ω )
|
International Rectifier
|
| IRF7314PBF IRF7314TRPBF IRF7314PBF-15 |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| NPT2021 NPT2022 NPT2024 NPA1006 |
Next generation high power RF semiconductor technology
|
M/A-COM Technology Solu...
|
| IDT8T49N008I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| KRF7301 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| SGD04N60 SGP04N60 SGP04N6007 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
