| PART |
Description |
Maker |
| IRF7303 IRF7303TR |
Generation V Technology
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
|
International Rectifier
http://
|
| IRF7303PBF IRF7303PBF-15 |
GENERATION V TECHNOLOGY
HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050ヘ )
HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050Ω )
|
International Rectifier
|
| IRF7313PBF IRF7313TRPBF IRF7313PBF-15 |
HEXFET Power MOSFET
Generation V Technology
|
IRF[International Rectifier]
|
| IRF7314PBF IRF7314TRPBF IRF7314PBF-15 |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| NPT2021 NPT2022 NPT2024 NPA1006 |
Next generation high power RF semiconductor technology
|
M/A-COM Technology Solu...
|
| IRLML2803GPBF11 |
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
|
International Rectifier
|
| IRF7304TR |
Generation V Technology
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| SGB06N60 SGB06N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
