| PART |
Description |
Maker |
| MX27L1000 MX27L1000MC-12 MX27L1000MC-15 MX27L1000M |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PDSO32
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32
TRIM POT 500 OHM 3MM SQUARE SMD
TRIM POT 50K OHM 3MM SQUARE SMD
|
MACRONIX INTERNATIONAL CO LTD
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| EM621FV16BU |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| EM610FV8T |
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| STC62WV12816 |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit
|
STC
|
| BS616LV2011 BS616LV2011AC BS616LV2011AI BS616LV201 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
|
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| BS62UV1027SIG10 |
Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit
|
BSI
|
| BS616LV2025 BS616LV2025AC BS616LV2025AI BS616LV202 |
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
| BS62LV1023 BS62LV1023DC BS62LV1023DI BS62LV1023JC |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit 非常低功电压CMOS SRAM28K的8
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| KM68FS1000Z |
128Kx8 Bit Super Low Power and Low Voltage Full CMOS SRAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128Kx8位超级低功耗和低电压的CMOS SRAM的全部（128K的8位超低功耗和低电压的CMOS静态RAM）的
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| A81L801UG-70IF A81L801 A81L801TG-70 A81L801TG-70F |
Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
|
AMICC[AMIC Technology]
|
