PART |
Description |
Maker |
M5M29GB161BVP M5M29WT160BVP M5M29GT161BVP M5M29GT1 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16,777,216位(2097,152 - Word 1048,576字BY16位)的CMOS 3.3只,块擦除闪
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Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
HN27C4000G-15 HN27C4000G-10 HN27C4000G-12 HN27C400 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM From old datasheet system
|
HITACHI[Hitachi Semiconductor]
|
HN27C4000G |
524288-Word x 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
GM72V161621ET GM72V161621 GM72V161621ELT |
524,288 word x 16 Bit x 2 Bank - SYNCHRONOUS DYNAMIC RAM(SDRAM) 524288 word x 16 Bit x 2 Bank SDRAM
|
LG Semiconductor List of Unclassifed Manufacturers ETC
|
M5M5V4R08J-15 M5M5V4R08J-20 M5M5V4R08J-12 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M5W816WG-70HI |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M5Y816WG-70HI M5M5Y816WG-85HI |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M5M44800CJ-7S M5M44800CJ-5S M5M44800CTP-6S |
FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
M5M5V5636GP-20 M5M5V5636GP-22 M5M5V5636GP-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
M5M5Y5636TG-20 M5M5Y5636TG-22 M5M5Y5636TG-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HN62334BTT-15 |
524288-word x 8-bit CMOS Mask Programmable ROM
|
Hitachi,Ltd.
|