PART |
Description |
Maker |
MX28F160C3TXAC-11G MX28F160C3BXAC-11 MX28F160C3BXA |
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 110 ns, PBGA48
|
Macronix International Co., Ltd. PROM MACRONIX INTERNATIONAL CO LTD
|
MX69F1604C3TXBI-90 MX69F1602 MX69F1602C3BXBI-70 MX |
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY
|
MCNIX[Macronix International]
|
MX29F1610 MX29F1610A MX29F1610A-10 MX29F1610A-12 M |
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
|
MCNIX[Macronix International]
|
K8D1716UBB-YI07 K8D1716UBB-YI08 K8D1716UBB-YI09 K8 |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory 1,600位(200万x8/1M x16)的双银行NOR闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|
MBM29F016A-90PFTN MBM29F016A-90PFTR MBM29F016A-12 |
FLASH MEMORY 16M (2M x 8) BIT CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
K8D1716UTC-TC09 K8D1716UTC-FI09 K8D1716UTC-FI07 K8 |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Spansion Inc. SPANSION LLC
|
K8D1716UBB K8D1716UTB K8D1716UTB-TC09 K8D1716UTB-Y |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory 16M Dual Bank NOR Flash Memory
|
http:// Samsung
|
KM416S1020BT-G10T |
CMOS 16M-Bit SDRAM
|
ETC
|
UPD4218160G5-60-7JF |
CMOS 16M-Bit DRAM
|
ETC
|