| PART |
Description |
Maker |
| ATF13284 |
1-16 Ghz Low Noise Gallium Arsenide FET
|
Agilent Technologies
|
| ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136 |
ER 3C 3#16 PIN RECP BOX
0.5-12 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| ATF-13336 |
2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| AMMC-5023 |
AMMC-5023 · 23 GHz Low Noise Amplifier
23 GHz Low Noise Amplifier (21.2-26.5 GHz)
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| AA028N1-00 |
240 GHz GaAs MMIC Low Noise Amplifier
GT 14C 10#12 4#16 PIN PLUG
24-30 GHz GaAs MMIC Low Noise Amplifier
|
Alpha Industries Inc
Alpha Industries, Inc.
ALPHA[Alpha Industries]
http://
|
| TLT-8-2015 |
Temperature Compensated Low Noise Amplifier 2 GHz - 8 GHz
|
Teledyne Technologies Incorporated
|
| PE15A1001 |
2 dB NF, 20 mW, 2 GHz to 4 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
| TLA-8-2014 |
Low Noise Amplifier 2 GHz - 8 GHz
|
Teledyne Technologies Incorporated.
|
| TLA-18-6006 TLA-18-6005 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated.
TELEDYNE[Teledyne Technologies Incorporated]
|
