PART |
Description |
Maker |
HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM 512M; 100MHz LVTTL interface SDRAM 512M; 133MHz LVTTL interface SDRAM
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Elpida Memory
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HYS72V32220GU-8-C2 HYS64V16300GU HYS64V16300GU-7.5 |
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank End-of-Life SDRAM Modules - 256MB PC133 (2-2-2) 2-bank (ECC) End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank (ECC) End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank (ECC) End-of-Life SDRAM Modules - 128MB PC133 (3-3-3) 1-bank (ECC) End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank End-of-Life SDRAM Modules - 128MB PC133 (3-3-3) 1-bank End-of-Life 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
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INFINEON[Infineon Technologies AG]
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K4S560432B-TC_L1H K4S560432B-TC_L1L K4S560432B-TC_ |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6x 4位4银行同步DRAM LVTTL
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 H |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块 144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块 256MB PC100 (2-2-2) 2-bank End-of-Life SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL CONNECTOR ACCESSORY IR LED 880NM 40 DEG SIDE VIEW
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S281632M-TL80 K4S281632M K4S281632M-L10 K4S28163 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
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Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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KM48L16031BT-GLZ_Y_0 KM44L32031BT-GLZ_Y_0 KM416L80 |
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP 0 to 70 Enhanced Product 10-Bit Analog-To-Digital Converters W/Serial Control & 11 Analog Inputs 20-SOIC -40 to 125 Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC 0 to 70 Quad, Micropower, LinCMOS(TM) Comparator 14-CDIP -55 to 125 Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP 0 to 70 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC 0 to 70 Enclosures; For Use With:PC30/25-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:11.4"; External Width:7.5"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 RoHS Compliant: Yes Enclosure; For Use With:PC17/16-L3, -3, -LFC3, FC3 Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:5.4"; External Width:5.2"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-SOIC 0 to 70 128MB DDR SDRAM 8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-SOIC 128MB DDR SDRAM Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-PDIP 0 to 70 128MB DDR SDRAM DIODE ZENER SINGLE 500mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-123 3K/REEL 128MB DDR SDRAM 8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-SOIC 128MB DDR SDRAM DIODE ZENER DUAL COMMON-CATHODE 300mW 5.6Vz 5mA-Izt 0.0714 0.1uA-Ir 1 SOT-23 3K/REEL 128MB DDR SDRAM DIODE ZENER SINGLE 200mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-323 3K/REEL 128MB DDR SDRAM 8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-PDIP 128MB DDR SDRAM DIODE ZENER DUAL COMMON-CATHODE 300mW 51Vz 5mA-Izt 0.0588 0.1uA-Ir 38 SOT-23 3K/REEL 128MB DDR SDRAM 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SOIC 128MB DDR SDRAM 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125 128MB DDR SDRAM DDR SDRAM Specification Version 1.0 DDR SDRAM的规范版.0 Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP -40 to 125 128MB DDR SDRAM 128Mb DDR SDRAM 128MB DDR SDRAM 8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-PDIP 128MB DDR SDRAM 8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-SOIC 128MB DDR SDRAM DDR SDRAM Specification Version 1.0 128Mb DDR SDRAM
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. http://
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HY5DU281622DT-J HY5DU2842DT-J HY5DU2842DT-L HY5DU2 |
DDR SDRAM - 128Mb
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Hynix Semiconductor
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