| PART |
Description |
Maker |
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S281632M-TL80 K4S281632M K4S281632M-L10 K4S28163 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4D26323QG K4D26323QG-GC33 K4D26323QG-GC25 K4D2632 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4D28163HD K4D28163HD-TC36 K4D28163HD-TC40 K4D2816 |
128Mbit DDR SDRAM 128Mbit DDR SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4D263238G-VC K4D263238G-GC36 K4D263238G-GC K4D263 |
128Mbit GDDR SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| V54C3128404VT |
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
|
Mosel Vitelic Corp
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| K4S511533F-YF |
8M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| T4312816B-6S |
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
