| PART |
Description |
Maker |
| M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
| PM8355 |
4-Channel 2.125, 2.5 and 3.125 Gbit/s Transceiver with Half-rate Support
4-Channel 2.125 2.5 and 3.125 Gbit/s Transceiver with Half-rate Support
|
PMC-Sierra, Inc
PMC[PMC-Sierra Inc]
|
| NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| STN8810BDS12HPBE STN8810S12 |
STn8810 mobile multimedia application processor with 1-Gbit NAND-Flash and 512-Mbit DDR mobile RAM
|
STMicroelectronics
|
| HYB18T512160B2F-2.5 HYB18T512160B2F-25F HYB18T5121 |
512-Mbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
|
| HYB18T512160A |
512-Mbit Double-Data-Rate-Two SDRAM
|
Infineon
|
| HYB18T512160BF-2.5 HYB18T512160BF-25F HYB18T512160 |
512-Mbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
|
