| PART |
Description |
Maker |
| RF5110G RF5110GPCBA-410 |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| ITT2110AH |
3.5V 3.3W RF Power Amplifier IC for GSM
|
M/A-COM / Tyco Electronics
|
| PBL40305 |
Multiband GSM Power Amplifier
|
ERICSSON[Ericsson]
|
| MRF5S9101NBR1 MRF5S9101NR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| AWT6172RM33P8 AWT6172RM33P9 AWT6172HM33P8 AWT6172H |
GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| PCF5077T |
Power amplifier controller for GSM and PCN systems
|
NXP Semiconductors
|
| MRFIC1859 |
Dual Band / GSM 3.6V Integrated Power Amplifier
|
Motorola
|
| PCF5078 PCF5078T |
Power amplifier controller for GSM and PCN systems
|
NXP Semiconductors
|
| AP137-501 |
Quad-Band GSM Power Amplifier Module
|
Skyworks Solutions Inc.
|
| PF0140 |
MOSFET POWER AMPLIFIER MODULE FOR GSM HANDY PHONE
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
|
