PART |
Description |
Maker |
IRFU220B IRFR220B IRFU220BTLTUFP001 IRFU220BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR220 & IRFR220A 200V N-Channel B-FET / Substitute of IRFU220 & IRFU220A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFW620B IRFI620B IRFI620BTUFP001 IRFW620BTMFP001 |
200V N-Channel B-FET / Substitute of IRFW620A 200V N-Channel MOSFET 200V N-Channel B-FET / Substitute of IRFI620A
|
FAIRCHILD[Fairchild Semiconductor]
|
FQA32N20C |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFS640 IRFS640B IRF640B IRF640 IRF640BTSTUFP001 I |
200V N-Channel B-FET / Substitute of IRF640 & IRF640A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor] http://
|
FQE10N20C FQE10N20CTU |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQPF19N20C FQP19N20C FQP19N20CTSTU |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFS650B IRFS650BFP001 |
200V N-Channel MOSFET 200V N-Channel B-FET / Substitute of IRFS650A
|
FAIRCHILD[Fairchild Semiconductor]
|
SFW9610 SFI9610TU |
Advanced Power MOSFET 200V P-Channel A-FET
|
Fairchild Semiconductor
|
IRF630BTSTUFP001 |
200V N-Channel B-FET / Substitute of IRF630 & IRF630A; ; No of Pins: 3; Container: Rail 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements 200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY 200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package 200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package 200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
FQB5N20L FQI5N20L FQI5N20 FQI5N20LTU |
200V LOGIC N-Channel MOSFET 4.5 A, 200 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA 200V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道,功率MOS场效应管) 00V安培,N沟道功率MOSFET(为200V9A条,沟道,功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|