| PART |
Description |
Maker |
| 5962-9951901QYA 5962-9951902QYA 5962-9952001QYA 59 |
5V, ISR high-performance CPLDs, 64 macrocells, 125MHz
5V, ISR high-performance CPLDs, 64 macrocells, 154MHz
3.3V, ISR high-performance CPLDs, 64 macrocells, 100MHz
3.3V, ISR high-performance CPLDs, 128 macrocells, 83MHz
3.3V, ISR high-performance CPLDs, 256 macrocells, 66MHz
5V, ISR high-performance CPLDs, 512 macrocells, 100MHz
3.3V, ISR high-performance CPLDs, 512 macrocells, 66MHz
3.3V, ISR high-performance CPLDs, 64 macrocells, 143MHz
|
Cypress
|
| AM29LV002 AM29LV002B-90RECB AM29LV002B-120FCB AM29 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only/ Boot Sector Flash Memory
Half Bridge Driver, LO Out of Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位）.0伏的CMOS只，引导扇区闪存
Connector 连接
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
MB 18C 18#20 PIN RECP 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区闪存
256K X 8 FLASH 3V PROM, 90 ns, PDSO40
|
AMD
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| IDT72V201L20J IDT72V201L20JI IDT72V211L20J IDT72V2 |
512 x 9 SyncFIFO, 3.3V
3.3 VOLT CMOS SyncFIFO 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
3.3 VOLT CMOS SyncFIFO⑩ 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
GT 11C 11#16 SKT RECP BOX RM
3.3 VOLT CMOS SyncFIFO 256 x 9/ 512 x 9/ 1/024 x 9/ 2/048 x 9/ 4/096 x 9 and 8/192 x 9
3.3 VOLT CMOS SyncFIFO256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3伏的CMOS SyncFIFO56 × 912 × 9,024 × 9,048 × 9,096 × 9,192 × 9
GT 6C 3#4 3#16 SKT RECP WALL 1K X 9 OTHER FIFO, 6.5 ns, PQCC32
GT 7C 7#16S PIN RECP
3.3 VOLT CMOS SyncFIFO??256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
GT 8C 8#16 SKT RECP WALL
GT 3C 3#16S PIN RECP WALL
GT 4C 4#12 PIN PLUG
3.3 VOLT CMOS SyncFIFO?256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
|
| V58C265804S |
HIGH PERFORMANCE 2.5 VOLT 8M X 8 DDR SDRAM 4 BANKS X 2Mbit X 8
|
MOSEL[Mosel Vitelic, Corp]
|
| V58C265404S |
HIGH PERFORMANCE 2.5 VOLT 16M X 4 DDR SDRAM 4 BANKS X 4Mbit X 4
|
MOSEL[Mosel Vitelic, Corp]
|
| V43728S04VCTG-75 |
3.3 VOLT 8M x 72 HIGH PERFORMANCE PC133 UNBUFFERED ECC SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
| V436532S04VATG-75 |
3.3 VOLT 32M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| V826632K24S |
2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
|
