| PART |
Description |
Maker |
| WED9LC6816V1510BC WED9LC6816V1510BI WED9LC6816V151 |
256K X 32 SSRAM/ 4M X 32 SDRAM
|
White Electronic Designs
ETC
|
| WED9LC6816V1310BI WED9LC6816V1512BI |
256K X 32 SSRAM/ 4M X 32 SDRAM 256 × 32的SSRAM / 4米32内存
|
Electronic Theatre Controls, Inc.
|
| AS5SS256K18DQ-10_IT AS5SS256K18DQ-10_XT AS5SS256K1 |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
|
Austin Semiconductor
|
| AS5SS256K18DQ-9_XT AS5SS256K18 AS5SS256K18DQ-10_IT |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
|
AUSTIN[Austin Semiconductor]
|
| AS5SS256K18DQ-8IT |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
|
Austin Semiconductor, Inc
|
| WED9LC6816V |
256Kx32 SSRAM/4Mx32 SDRAM Array(256Kx32同步静态RAMB>4Mx32同步动态RAM阵列)
|
White Electronic Designs Corporation
|
| M13S32321A |
256K x 32 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| GS88132BT-150IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS880V36BT-250 GS880V18BT-333 GS880V18BT-250 GS880 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PQFP100
|
GSI Technology, Inc.
http://
|
| GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44
256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM
RES, MTF 20K 1/4W 2%
ER 16C 16#16 SKT PLUG
ER 13C 3#8 3#12 7#16 SKT PLUG
10ns 256K X 16 4Mb Asynchronous SRAM
256K X 16 STANDARD SRAM, 7 ns, PBGA48
|
SRAM
Electronic Theatre Controls, Inc.
GSI[GSI Technology]
N.A.
ETC
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| AS5SS512K36DQ-8.5_IT AS5SS512K36DQ-8.5_XT AS5SS512 |
512K x 36 SSRAM Flow-Through SRAM No Bus Latency
|
Austin Semiconductor
|
