PART |
Description |
Maker |
IRFU220B IRFR220B IRFU220BTLTUFP001 IRFU220BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR220 & IRFR220A 200V N-Channel B-FET / Substitute of IRFU220 & IRFU220A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFU230B IRFR230B IRFU230BTLTUFP001 |
200V N-Channel B-FET / Substitute of IRFU230A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRF650 IRF650B IRFS650B IRF650BFP001 |
200V N-Channel B-FET / Substitute of IRF650A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FQPF10N20C FQPF10N20CNL |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 9.5 A, 200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
SFR9210 SFU9210 SFR9210F SFU9210TUAM002 |
200V P-Channel A-FET Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
SFW9620TM |
200V P-Channel A-FET Advanced Power MOSFET
|
Fairchild Semiconductor
|
IRLR210 IRLR210A IRLR210ATF IRLR210ATM |
ADVANCED POWER MOSFET 200V N-Channel Logic Level A-FET / Substitute of IRLR210
|
Fairchild Semiconductor
|
IRF9240 IRF9240-15 |
Simple Drive Requirements TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.5ohm, Id=-11A) HEXFET?TRANSISTORS 200V, P-CHANNEL 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
IRF[International Rectifier]
|
FQU630 FQD630 FQD630TM |
200V N-Channel QFET 200V N-Channel MOSFET(N沟道增强型MOS场效应管(漏电流7A, 漏源电压200V,导通电.4Ω
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
FQI10N20C FQB10N20C FQB10N20CTM FQI10N20CTU |
200V N-Channel MOSFET 200V N-Channel Advance QFET C-series
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道,功率MOS场效应管) 00V安培,N沟道功率MOSFET(为200V9A条,沟道,功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|