PART |
Description |
Maker |
P87C52SFAA P80C31SBAA P80C51SBAA P87C51SBAA P80C51 |
80C51 8-bit microcontroller family 4 K-8 K OTP-ROM low voltage (2.7 V-5.5 V), low power, high speed (33 MHz), 128-256 B RAM 80C51 8-bit microcontroller family 4 K/8 K OTP/ROM low voltage (2.7 V?.5 V)
|
NXP Semiconductors N.V.
|
1N482B FTSO5139 FTSO5138 1N462A |
General purpose low leakage diode. Working inverse voltage 36V. PNP small signal general purpose amplifier & switch. PNP low level amplifier. General purpose high conductance diode. Working inverse voltage 60V.
|
Fairchild Semiconductor
|
P83C654X2FA |
80C51 8-bit microcontroller family 16 kB OTP/ROM, 256B RAM, low voltage (2.7 to 5.5 V), low power, high speed (30/33 MHz) 8-BIT, MROM, 33 MHz, MICROCONTROLLER, PQCC44
|
NXP Semiconductors N.V.
|
P87C51 |
80C51 8-bit microcontroller family 4 K/8 K OTP/ROM low voltage (2.7 V-5.5 V), low power, high speed (33 MHz), 128/256 B RAM
|
Philips
|
P80C51 P80C51RA P87C51FA P87C51FB P87C51FC P87C51R |
80C51 8-bit microcontroller family 8K-64K/256-1K OTP/ROM/ROMless, low voltage 2.7V-5.5V), low power, high speed (33 MHz)
|
Philips
|
ZCRMZNICE01ZACG ZCRMZNICE01ZEMG ZCRMZNICE02ZACG ZC |
Low-Voltage ROM MCUs with Infrared Timers 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDSO20
|
Maxim Integrated Products http:// MAXIM INTEGRATED PRODUCTS INC
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
MPP10-05D12AB MPP10-05S05AB MPP10-05D15AB MPP10-05 |
REINFORCED INSULATION FOR 250VAC WORKING VOLTAGE
|
RSG Electronic Components GmbH RSG Electronic Components G...
|
ZLR16300S2816G ZLP128ICE01ZEM ZLR16300 ZLR16300H20 |
Z8 Low Voltage ROM MCUs with Infrared Timers
|
ZILOG[Zilog, Inc.]
|
ZLP128ICE01ZEMG ZLR16300P2801G ZLR16300P2802G ZLR1 |
Low-Voltage ROM MCUs with Infrared Timers
|
Maxim Integrated Products
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