| PART |
Description |
Maker |
| STP5NB100 STP5NB100FP |
N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| OM6N100SA OM5N100SA OM3N100SA OM3N100ST OM1N100SA |
1000V; up to 6 Amp, N-channel MOSFET
1000V Single N-Channel Hi-Rel MOSFET in a D3 package
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE
|
Omnirel
International Rectifier
ETC
List of Unclassifed Manufacturers
|
| STD1NB60 |
N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET
|
http://
STMicroelectronics
SGS Thomson Microelectronics
|
| RURP8100 MUR8100E FN2780 MURP810 |
8A/ 1000V Ultrafast Diodes
From old datasheet system
(MUR8100E / MURP8100) 8A / 1000V Ultrafast Diodes
8A, 1000V Ultrafast Diodes(8A, 1000V超快二极用于开关电 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
8A, 1000V Ultrafast Diodes 8A条，1000V共超快二极管
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| STW8NB100 6509 |
N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET
From old datasheet system
N - CHANNEL 1000V - 1.2 - 8A - TO-247 PowerMESH TM MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| W13NK100Z STW13NK100Z STW13NK100Z_06 STW13NK100Z06 |
N-channel 1000V - 0.56?/a> - 13A - TO-247 Zener - Protected SuperMESH?/a> PowerMOSFET
N-channel 1000V - 0.56з - 13A - TO-247 Zener - Protected SuperMESH⑩ PowerMOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STU6NA100 6003 |
N - CHANNEL 1000V - 1.45ohm - 6A - Max220 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 1000V - 1.45 - 6A - Max220 FAST POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| DG3540DB-T1-E1 DG3537DB-T5-E1 DG3538DB-T5-E1 DG353 |
4ohm, 360 MHz, Dual SPST Analog Switches
DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PBGA8 3 X 3 MM, 0.50 MM PITCH, ROHS COMPLIANT, MICRO FOOT-8
|
Vishay Siliconix
Vishay Beyschlag
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| IRFBC20 |
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
| AOD2N100 |
1000V,2A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| HGTG34N100E2 |
34A/ 1000V N-Channel IGBT
34A, 1000V N-Channel IGBT
|
INTERSIL[Intersil Corporation]
|
