| PART |
Description |
Maker |
| K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S |
512Mb B-die SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4T1G044QA K4T1G164QA-ZCD5 K4T1G164QA-ZCE6 K4T1G04 |
1Gb A-die DDR2 SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| K4H561638F-UC K4H561638F-UC_LB3 K4H560838F-UC_LA2 |
256Mb F-die DDR SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4B1G1646C |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| K4B1G0446C-CF8 K4B1G0446C K4B1G0446C-ZCG9 K4B1G044 |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
http://
|
| K4T56163QI K4T56163QI-ZCLCC K4T56163QI-ZCLD5 K4T56 |
256Mb I-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| K4T51163QE K4T51083QE |
512Mb E-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| K4S560432E-TC K4S560432E-TC75 K4S561632E-TL75 K4S5 |
256Mb E-die SDRAM Specification 256Mb的电子芯片内存规
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4H510438 |
512Mb B-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4T51043QE |
512Mb E-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
