| PART |
Description |
Maker |
| MMDF6N02HD MMDF6N02HD_D ON2197 ON2196 |
DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS
Medium Power Surface Mount Products
From old datasheet system
|
Motorola, Inc
ON Semi
|
| MTDF1P02HD |
DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM
|
Motorola, Inc.
|
| MMDF2N02E MMDF2N02E_D ON2160 |
From old datasheet system
Medium Power Surface Mount Products
DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| EDI8F3265C20MZC EDI8F3265C20MMC |
High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R X32号的SRAM模块
|
TE Connectivity, Ltd.
|
| ISL6610CRZ ISL6610CBZ ISL6610 ISL6610A ISL6610ACBZ |
Dual Synchronous Rectified MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 16-QFN T&R 4 A BUF OR INV BASED MOSFET DRIVER, PQCC16
|
Intersil, Corp.
Intersil Corporation
|
| MMDF2N06V |
DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS
|
MOTOROLA[Motorola, Inc]
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229 |
TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS
From old datasheet system
TMOS P-CHANNEL FIELD FEECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
|
ON Semiconductor
|
| MTP5PXX MTP7N06 |
(MTPxxxx) TMOS Power MOSFET
|
Motorola
|
| MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
