| PART |
Description |
Maker |
| KS9802 |
INFRAED REMOCON RECEIVER
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| S5G98013X01 |
INFRAED REMOCON RECEIVER Data Sheet
|
Samsung Electronic
|
| 20-1B12IPA008SC-L239C09 20-PB12IPA008SC-L239C09Y |
Open Emitter or Emitter Shunt
|
Vincotech
|
| SLT1440-H885A SLT1440-H260A SLT1446-F850A SLT1446- |
FIBER OPTIC DFB LASER MODULE EMITTER, 1368-1372nm, THROUGH HOLE MOUNT
FIBER OPTIC DFB LASER MODULE EMITTER, 1408-1412nm, THROUGH HOLE MOUNT
FIBER OPTIC DFB LASER MODULE EMITTER, 1508-1512nm, THROUGH HOLE MOUNT
FIBER OPTIC DFB LASER MODULE EMITTER, 1607-1613nm, THROUGH HOLE MOUNT
FIBER OPTIC DFB LASER MODULE EMITTER, 1568-1572nm, THROUGH HOLE MOUNT
|
|
| 2SD2459 |
High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
| CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| SLT4466-XP/RH2-H885A SLT4460-CP/RH2-H260A SLT4466- |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1368-1372nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT ROHS COMPLIANT PACKAGE
FIBER OPTIC LASER DIODE MODULE EMITTER, 1408-1412nm, 2500Mbps, THROUGH HOLE MOUNT, SC/PC CONNECTOR ROHS COMPLIANT PACKAGE
FIBER OPTIC LASER DIODE MODULE EMITTER, 1367-1373nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
FIBER OPTIC LASER DIODE MODULE EMITTER, 1348-1352nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
FIBER OPTIC LASER DIODE MODULE EMITTER, 1528-1532nm, 2500Mbps, THROUGH HOLE MOUNT, SC/PC CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1528-1532nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
|
Japan Aviation Electronics Industry, Ltd.
Cooper Bussmann, Inc.
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| STE07DE220 E07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module
|
ST Microelectronics
STMicroelectronics
|
