PART |
Description |
Maker |
NTE135 NTE131 |
Germanium Complementary Transistors Audio Power Amplifier
|
NTE[NTE Electronics]
|
Q60103-X152-D Q60103-X152-E Q60103-X152-F Q60103-X |
pnp germanium transistors pnp型锗晶体 CAP .0022UF 1600V METAL POLYPRO pnp型锗晶体 Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:37; Connector Shell Size:14; Connecting 24 V, PNP germanium transistor 20 V, PNP germanium transistor
|
Siemens Semiconductor G... SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
GL607 OA180 OA1182 OA1161 OA1154 |
10 V, 300 mA, gold bonded germanium diode 20 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 140 V, 500 mA, gold bonded germanium diode 55 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
|
BDX33B BDX34C BDX34B ON0204 BDX33C |
From old datasheet system 10 AMPERE COMPLEMENTARY Darlington Complementary Silicon Power Transistors
|
Motorola Inc ON Semiconductor Motorola, Inc
|
MJH6287 MJH6284 ON2053 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS From old datasheet system 20 AMPERE COMPLEMENTARY SILICON
|
ONSEMI[ON Semiconductor]
|
MJW0281A MJW0281A05 MJW0302A MJW0281ADATASHEET MJW |
Complementary NPN?PNP Power Bipolar Transistors ; Package: SOIC NARROW; No of Pins: 14; Qty per Container: 55/Rail 15 A, 260 V, PNP, Si, POWER TRANSISTOR, TO-247AD Complementary NPN-PNP Power Bipolar Transistors Complementary Power Transistors
|
ON Semiconductor http://
|
1N3470 |
Germanium Diode
|
New Jersey Semi-Conductor Products, Inc.
|
1N541 |
Germanium Diode
|
New Jersey Semi-Conductor Products, Inc.
|
OA95/05 |
Diode Germanium
|
ETC
|
G1607 |
GERMANIUM DIODE
|
BKC
|
1N4502 |
GERMANIUM DIODE
|
New Jersey Semi-Conductor Products, Inc.
|