| PART |
Description |
Maker |
| PTB20206 |
1.0 Watt, 470-860 MHz RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| AWB7225 |
860 MHz to 894 MHz Small-Cell Power Amplifier Module
|
Anadigics, Inc.
|
| BGD804 BGD804112 |
860 MHz, 20 dB gain power
|
NXP Semiconductors N.V.
Philips
|
| CGD91401 9397-750-08861 CGD914MI |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
|
| PTB20111 |
85 Watts, 860-900 MHz Cellular Radio RF Power Transistor
|
ERICSSON[Ericsson]
|
| SE2435L |
860 to 930 MHz High-Power RF Front-End Module
|
Skyworks Solutions Inc.
|
| PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
| CMM1631-SM-0G00 CMM1631-SM-0G0T CMM1631-SM0608 MIM |
16.0-18.0 GHz 1.5-Watt Power Amplifier 16000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
16.0-18.0 GHz 1.5-Watt Power Amplifier 16.0-18.0千兆50瓦功率放大器
|
Mimix Broadband, Inc.
|
