| PART |
Description |
Maker |
| BC847AWT1 BC847BWT1 BC847CWT1 BC848BWT1 BC846BWT1 |
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CASE 419-02/ STYLE 3 SOT-323/SC-70
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| BC857BWT1 BC857AWT1 BC858BWT1 BC856BWT1 BC858AWT1 |
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CASE 419-02/ STYLE 3 SOT-323/SC-70
CASE 419-02 STYLE 3 SOT-323/SC-70
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BAW56WT1 ON0138 |
Dual Switching Diode
From old datasheet system
CASE 419 -02 ,STYLE4 SC-70SOT-323
|
Motorola, Inc
ON Semi
|
| DTA143EE DTA143EE_D ON0279 |
Bias Resistor Transistor
CASE 463-01, STYLE 1 SOT-416/SC-90
CASE 463-1, STYLE 1 SOT-16/SC-0
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| BAS4004LT1 |
CASE 318 08/ STYLE 12 SOT 23 (TO 236AB)
CASE 318 08, STYLE 12 SOT 23 (TO 236AB)
|
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| 2N5555 ON0063 |
CASE 29.04, STYLE 5 TO-92 (TO-226AA)
CASE 29-4, STYLE 5TO-2 (TO-26AA)
From old datasheet system
JFET Switching
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| HSMS-280ASERIES HSMS-282ASERIES HSMS-281ASERIES |
Surface Mount RF Schottky Diodes in SOT-323 (SC-70) (87K in pdf) 表面贴装射频肖特基二极管的SOT - 323（的SC - 70）（2000-08-19 PDF格式
|
DB Lectro, Inc.
Bourns, Inc.
|
| 2N7000 |
CASE 29-04, STYLE 22 TO-92 (TO-226AA) 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
CASE 29-04/ STYLE 22 TO-92 (TO-226AA)
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
|
MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
|
| 2SC5463 2SC5463O |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-323 晶体管|晶体管|叩| 12V的五（巴西）总裁| 60mA的一（c）|的SOT - 323
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba, Corp.
Toshiba Semiconductor
|
|
