| PART |
Description |
Maker |
| 2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
|
Boca Semiconductor Corporation
|
| BD165 BD169 |
Plastic Medium Power Silicon NPN Transistor
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| BDX53CG BDX53B07 |
Plastic Medium-Power Complementary Silicon Transistors
|
Rectron Semiconductor
|
| BD190 BD186 BD188 |
PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| 2N4920G 2N4918 2N4918_04 2N4919 2N4920 |
Medium-Power Plastic PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| BD675-D |
Plastic Medium-Power Silicon NPN Darlingtons
|
ON Semiconductor
|
| 2N4920 |
MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| MJE340-D |
Plastic Medium Power NPN Silicon Transistor
|
ON Semiconductor
|
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
