| PART |
Description |
Maker |
| KLNR8 KLNR5 KLNR6 KLNR4 KLNR70 KLNR50 KLNR90 KLNR6 |
Execution Time (ns): 50 (@20MHz); Operating Frequency / Supply Voltage: 20MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V, 5MHz/2.2 to 5.5V; Operating Ambient Temperature
Execution Time (ns): 50 (@20MHz); Operating Frequency / Supply Voltage: 20MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -40
R8C; R8C/2x Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 32K; RAM: 1.5K; ROM Type: Flash memory; CPU: R8C core; Minimum Instruction
R8C; R8C/2x Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 24K; RAM: 1.5K; ROM Type: Flash memory; CPU: R8C core; Minimum Instruction
R8C; R8C/2x Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 16K 2K; RAM: 1K; ROM Type: Flash memory; CPU: R8C core; Minimum Instruction
R8C; R8C/2x Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 8K; RAM: 512; ROM Type: Flash memory; CPU: R8C core; Minimum Instruction
R8C; R8C/2x Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 8K 2K; RAM: 512; ROM Type: Flash memory; CPU: R8C core; Minimum Instruction
R8C; R8C/2x Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 16K; RAM: 1K; ROM Type: Flash memory; CPU: R8C core; Minimum Instruction
General Purpose Fuses
|
Littelfuse, Inc.
|
| HYM324000GD-60 HYM324000GD-50 |
4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 4M X 32 FAST PAGE DRAM MODULE, 60 ns, ZMA72
CAP 0.5PF 50V /-0.2PF THIN-FILM SN96/AG4/NI 30PPM TR-7-PA
4M x 32 Bit DRAM Module (SO-DIMM)
-4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| SDA9251-2X SDA92512 SDA9251-2XGEG |
868352-Bit Dynamic Sequential Access Memory for Television Applications (TV-SAM) 212K X 4 VIDEO DRAM, 25 ns, PDSO28
From old datasheet system
868352-Bit Dynamic Sequential Access ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| HM514800ALJ-7 HM514800ALJ-8 HM51S4800ALJ-7 HM51480 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
80ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| SMJ44400HR SMJ44400JD |
1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY
|
ETC
|
| EM23C3220 |
5V Only 32M-BitM×8/2M×16Read Only Memory(5V单电2M位CMOS ROM)
|
ELAN Microelctronics Corp .
|
| PIC18C601I/PT |
High-Performance ROM-less Microcontrollers with External Memory Bus
|
Microchip
|
| HM5117400BS-6 HM5117400BS-7 HM5117400BS-8 HM511740 |
4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HM5118160BJ-8 HM5118160BLJ-8 |
1048576-word x 16-bit Dynamic Random Access Memory
|
Hitachi,Ltd.
|
| AK5368192WP-70 |
8,388,608 by 36 Bit CMOS Dynamic Random Access Memory
|
http://
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK481024 AK581024AG AK581024AS |
1,048,576 x 8 bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK481024G AK481024S |
1,048,576 x 8 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
