| PART |
Description |
Maker |
| R1RP0408DGE-2PR R1RP0408D R1RP0408DGE-2LR |
4M High Speed SRAM (512-kword 8-bit)
4M High Speed SRAM (512-kword ?8-bit)
4M High Speed SRAM (512-kword ?8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| HM62W8511HI HM62W8511HJPI-15 |
4M High Speed SRAM (512-kword x 8-bit)
|
HITACHI[Hitachi Semiconductor]
|
| HM628511H HM628511HJP-10 HM628511HJP-12 HM628511HJ |
4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位）
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode)
16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode)
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|
| HM6216255HI HM6216255HJPI-12 HM6216255HJPI-15 HM62 |
4M high Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWordx 16位）
4M high Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWord的x 16位）
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HM628512B HM628512BLP-5SL HM628512BLP-7UL |
4 M SRAM (512-kword ×8-bit)(4 M 静态RAM(512k字)
STANDARD SRAM, PDIP32
|
Hitachi,Ltd.
|
| HM62W16255HI HM62W16255HJPI-15 HM62W16255HTTI-15 H |
High-Speed SRAMs
4M High Speed SRAM (256-kword x 16-bit)
|
HITACHI[Hitachi Semiconductor]
|
| HM62W8512BI HM62W8512BLTTI-8 HM62W8512BLTTI-7 |
4 M SRAM (512-kword ′ 8-bit)
4 M SRAM (512-kword ? 8-bit)
|
Renesas Electronics Corporation
|
| R1RP0416D-15 |
4M High Speed SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM
JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70
WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA
High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
|
Integrated Device Technology, Inc.
IDT
|
| HM62V16512I HM62V16512LBPI-5 HM62V16512LBPI-5SL |
WIDE TEMPERATURE RANGE VERSION 8 M SRAM (512-KWORD X 16-BIT)
|
RENESAS[Renesas Electronics Corporation]
|
