| PART |
Description |
Maker |
| STGB20NB41LZT4 STGB20NB41LZ |
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 20A - DPAK INTERNALLY CLAMPED PowerMESH IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STGP20NB37LZ |
N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED POWERMESH IGBT
|
ST Microelectronics
|
| STB130NS04ZB STP130NS04ZB STW130NS04ZB STB130NS04Z |
CAP 0.1UF 100V 10% X7R AXIAL TR-14 N通道钳位- 7毫欧- 80A条TO-220/D2PAK/TO-247充分保护MOSFET的网格密
N-CHANNEL CLAMPED - 7 mohm - 80A TO-220/D2PAK/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET
N-CHANNEL PROTECTED MESH OVERLAY MOSFET
N-CHANNEL CLAMPED - 8mOhm - 80A TO-220/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STB20NM60D |
N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET
N-channel 600V - 0.26ヘ - 20A - D2PAK FDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| MGP20N40CL_D ON1864 MGP20N40CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
From old datasheet system
20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V ce(on) = 1.8 VOLTS 400 VOLTS (CLAMPED)
|
ONSEMI[ON Semiconductor]
|
| STB20NM60-1 STB20NM60T4 STP20NM60 STP20NM60FP |
N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
|
ST Microelectronics
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| MLD2N06CL ON2069 MLD2N06CL-D |
VOLTAGE CLAMPED CURRENT LIMITING MOSFET
From old datasheet system
Internally Clamped, Current Limited N hannel Logic Level Power MOSFET
SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET
|
Motorola, Inc.
ON Semiconductor
|
| STB7NC80Z STB7NC80Z-1 STP7NC80ZFP STP7NC80Z STBB7N |
6.5 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL MOSFET
New Generation Twisted Paired Multiconductor Audio Cable; Number of Conductors:4; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 800V - 1.3 OHM - 6.5A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MGP15N43CL |
Internally Clamped N-Channel IGBT
Internally Clamped N-Channel IGBT 15 A, 460 V, N-CHANNEL IGBT, TO-220AB
|
ONSEMI[ON Semiconductor]
|
| HUF75321D3 HUF75321D3S FN4351 |
20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs
From old datasheet system
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036Ω, N沟道UltraFET功率MOS场效应管)
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036惟, N娌??UltraFET???MOS?烘?搴??)
|
Intersil Corporation
FAIRCHILD SEMICONDUCTOR CORP
|
| STB6LNC60 |
N-CHANNEL 600V - 1ohm - 5.8A D2PAK PowerMesh⑩II MOSFET N沟道600V 1ohm - 5.8A D2PAK封装MOSFET的第二PowerMesh
N-CHANNEL 600V - 1ohm - 5.8A D2PAK PowerMeshII MOSFET
N-CHANNEL 600V - 1ohm - 5.8A D2PAK PowerMesh?II MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
