| PART |
Description |
Maker |
| LTC1315 LTC1314-15 LTC1314 |
PCMCIA Switching Matrix with Built-In N-Channel VCC Switch Drivers
PCMCIA Switching Matrixwith Built-In N-Channel VCC Switch Drivers
|
Linear Technology
|
| MAX1602 MAX1602EEE |
Single-Channel CardBus and PCMCIA VCC/VPP Power-Switching Network
|
MAXIM - Dallas Semiconductor
Maixm
MAXIM[Maxim Integrated Products]
|
| MAX1600EAI MAX1600EAIT |
Dual-Channel CardBus and PCMCIA VCC VPP Power Switching Networks
|
MAXIM - Dallas Semiconductor
|
| MAX1600 MAX1603 |
Dual-Channel CardBus and PCMCIA VCC VPP Power Switching Networks
Dual-Channel CardBus and PCMCIA VCC/VPP Power-Switching Networks
|
MAXIM - Dallas Semiconductor
Maixm
|
| 1SS392 |
Small package Low forward voltage :VF =0.54V(Typ). Low reverse current :IR =5 A(Max).
|
TY Semiconductor Co., L...
|
| MAX6754UKLD0-T MAX6755UKLD0-T MAX6756UKLD0-T MAX67 |
Vcc: 5.0 V, active timeout period: 0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 5.0 V, active timeout period: 100 ms-320 ms, low-power, single/dual-voltage window detector
Vcc: 5.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 2.5 V, Vcc:1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, Vcc: 1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, Vcc:adj, active timeout period:185 ms, low-power single/dual-voltage window detector
|
MAXIM - Dallas Semiconductor
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| PMO-4530PN-47UQ |
Sensitivity Range -47 ± 3 dB RL = 2.2 k Vcc = 2.0v
|
Mallory performance clu...
|
| 63440 |
POL MINITEK VCC WITH LATCHING
|
FCI connector
|
| SPC125 |
VCC P/N CLIPLITE SPC 125 SPACER
|
List of Unclassifed Man...
|
| LTC1471CS |
Single and Dual PCMCIA Protected 3.3V/5V VCC Switches
|
Linear Technology
|
