PART |
Description |
Maker |
AT29C257 AT29C257-12 AT29C257-12JC AT29C257-12JI A |
256K 32K x 8 5-volt Only CMOS Flash Memory
|
ATMEL[ATMEL Corporation]
|
27C256 27C256-10 27C256-10EL 27C256-10EP 27C256-10 |
256K (32K x 8) CMOS EPROM 256K (32K x 8) CMOS EPROM 256K2K的8)的CMOS存储 DIODE SCHOTTKY 150V 60A TO247AC CAPACITOR 1500UF 80V ELECT TSHA CAP 270UF 400V ELECT TS-ED From old datasheet system 256K (32x8) CMOS EPROM
|
YEONHO Electronics Co., Ltd. Microchip Technology, Inc. Microchip Technology Inc. MICROCHIP[Microchip Technology]
|
AT28C256-15PI AT28C256-15PC AT28C256E AT28C256E-15 |
256K 32K x 8 Paged CMOS E2PROM 256K (32K x 8) Paged CMOS From old datasheet system
|
ATMEL[ATMEL Corporation]
|
IDT71V256SB20Y IDT71V256 IDT71V256SB IDT71V256SB12 |
3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT) 32K X 8 CACHE TAG SRAM, 12 ns, PDSO28
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
IDT71V256S IDT71V256SA15TP IDT71V256SA15PZI IDT71V |
LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) 32K X 8 CACHE SRAM, 12 ns, PDSO28
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
HN58C257A HN58C256AFP10 HN58C256AP10 |
256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k×8) IC-SM-256K CMOS EEPRM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
|
Hitachi,Ltd.
|
AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k) Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
LH51256L LH51256N-12L LH51256N-10L LH51256-10L LH5 |
CMOS 256K (32K X 8) STATIC RAM
|
Sharp Electrionic Components ETC
|
LH5P832 |
CMOS 256K (32K x 8) Pseudo-Static RAM
|
Sharp Electrionic Components
|