| PART |
Description |
Maker |
| DG421C/D DG425C/D DG423C/D DG425CY DG425CJ DG423 D |
Improved Low-Power / CMOS Analog Switches with Latches
Improved Low-Power, CMOS Analog Switches with Latches
|
Maxim Integrated Products, Inc.
|
| DG408 DG409 |
Improved, 16-Channel CMOS Analog Multiplexers(改进通道CMOS模拟多路复用
Improved, Dual 10 Channel CMOS Analog Multiplexers(改进型双10通道CMOS模拟多路转换
|
Maxim Integrated Products, Inc.
|
| TC7109 TC7109A |
The TC7109A is a 12-bit plus sign,CMOS low-power analog-to-digital converter (ADC).Only eight passive components and a crystal are required to form a complete dual-slope integrating ADC. The improved VOH source current TC7109A has features
|
Microchip
|
| DG407 |
Improved, Dual 8 Channel CMOS Analog Multiplexers(改进型双8通道CMOS模拟多路复用
Improved, Dual 8 Channel CMOS Analog Multiplexers(?硅????8???CMOS妯℃?澶?矾澶????
|
Maxim Integrated Products, Inc.
|
| TDA4863G TDA4863 Q67040-A4451 Q67040-S4452 |
Power Control ICs - Improved PFC-IC for in SMD-Package
Power Control ICs - Improved PFC-IC for DCM
Boost Controller
|
Philips Semiconductors
INFINEON[Infineon Technologies AG]
|
| DG442BDY DG441B DG441BDJ DG441BDN DG441BDY DG442B |
Improved Quad SPST CMOS Analog Switches
|
VISAY[Vishay Siliconix]
|
| DG212B DG211B 70040 |
Improved Quad CMOS Analog Switches
From old datasheet system
|
Vishay
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| CA3160A |
Op Amp, BiMOS, MOSFET Inputs, CMOS Outputs, 4MHz, Improved Input Characteristics
|
Intersil
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
