| PART |
Description |
Maker |
| KM718FV4021H-5 KM718FV4021H-6 KM718FV4021H-7 KM736 |
(KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7P401822M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
| K7B401825B K7B403625B |
128Kx36 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7A403600B06 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| CY7C1350 7C1350 |
128Kx36 Pipelined SRAM with NoBL Architecture(带NoBL结构28Kx36流水线式 SRAM) 128K × 36至流水线与总线延迟静态存储器体系结构（带总线延迟结构28K × 36至流水线式的SRAM
128Kx36 Pipelined SRAM with NoBL Architecture(B>NoBL结构28Kx36流水线式 SRAM)
From old datasheet system
|
Cypress Semiconductor Corp.
|
| K7P401811M-HC160 K7P403611M-HC200 K7P403611M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
128K X 36 STANDARD SRAM, 2.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Samsung Electronic
|
| KM736V787 |
128Kx36 Synchronous SRAM
|
Samsung Semiconductor
|
| KM736V795 |
128Kx36 Synchronous SRAM
|
Samsung Semiconductor
|
| KM736V789 |
128Kx36 Synchronous SRAM
|
Samsung Semiconductor
|
| IDT71P74104S167BQ IDT71P74104S200BQ IDT71P74104S25 |
1.8V 512K x 36 QDR II PipeLined SRAM
1.8V 2M x 9 QDR II PipeLined SRAM
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 2M x 8 QDR II Pipelined SRAM
18Mb Pipelined QDR II SRAM Burst of 4
|
IDT
http://
|
| KM736V790 |
128Kx36 Synchronous SRAM
From old datasheet system
|
Samsung
|
