| PART |
Description |
Maker |
| M5M5255DP-45LL M5M5255DP-45XL M5M5255DP-55LL M5M52 |
262 /144-BIT (32 /768-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HM514258AZP-8 HM514258AZP-12 |
80ns; V(cc/t): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
120ns; V(cc/t): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
|
Hitachi Semiconductor
|
| TC55VZM216AJJI-08 TC55VZM216AFTI-08 TC55VZM216AFTI |
262,144-WORD BY 16-BIT CMOS STATIC RAM
|
TOSHIBA
|
| TC55VEM216AXBN40 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
|
TOSHIBA
|
| TC55V400AFT-55 TC55V400AFT-70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MSM521004 |
262,144-Word x 4-Bit CMOS STATIC RAM
From old datasheet system
|
OKI
|
| HM514260LTT-10 HM514260LTT-7 HM514260LTT-8 HM51426 |
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
| HM51258P HM51258P-10 HM51258P-12 HM51258P-15 HM512 |
262,144-word x 1-bit Static Column CMOS Dynamic RAM
262144 word x 1 Bit Static Column CMOS DRAM
|
Hitachi Semiconductor
|
| MSM512800A MSM512800A-45 MSM512800A-50 MSM512800A- |
262,144-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 262,144字8位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
|
| MSM534032E |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit MASKROM
From old datasheet system
Page Mode MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| MSM5416273 |
262,144-Word x 16-Bit Multiport DRAM
|
OKI electronic componets
|
