PART |
Description |
Maker |
BRG25N120D |
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
|
Foshan Blue Rocket Elec...
|
DMJT9435-13 DMJT9435 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-4 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
|
Diodes, Inc. Diodes Incorporated
|
BFS360L6 |
2 CHANNEL, S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz
|
INFINEON TECHNOLOGIES AG
|
IRGPC30UD2 |
600V Copack IGBT in a TO-3P (TO-247AC) package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRGPC30U |
600V Discrete IGBT in a TO-3P (TO-247AC) package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3 Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
IRGPF50F 2003 IRGPF50 |
900V Discrete IGBT in a TO-3P (TO-247AC) package INSULATED GATE BIPOLAR TRANSISTOR From old datasheet system
|
International Rectifier
|
IRGPH50KD2 2017 |
1200V Copack IGBT in a TO-3P (TO-247AC) package From old datasheet system INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
APT43GA90SD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 43;
|
MICROSEMI POWER PRODUCTS GROUP
|
BFR340L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules
|
INFINEON[Infineon Technologies AG]
|