| PART |
Description |
Maker |
| 5962-8863604LX 5962-8863603LX CY7C235A-25PC CY7C23 |
Memory : PROMs
|
Cypress
|
| XCF01SV XCF01SVG XCF01SVO20C XCF01SVO48 XCF01SVOG2 |
Platform Flash In-System Programmable Configuration PROMS 平台Flash在系统可编程配置方案管理系统
Platform Flash In-System Programmable Configuration PROMS 8M X 1 CONFIGURATION MEMORY, PDSO48
|
Xilinx, Inc.
PROM
XILINX INC
|
| XQ18V04 XQR18V04 XQ18V04VQ44N DS082 |
IEEE Std 1149.1 boundary-scan (JTAG) support
QPro XQ18V04 (XQR18V04) QML In-System Programmable Configuration PROMs
QPro XQ18V04 (XQR18V04) QML In-System Programmable Configuration PROMs
|
Xilinx, Inc.
|
| XQ1701L-SERIES XQR1701L-SERIES XQ1701LCC44M XQR170 |
Cascadable for storing longer or multiple bitstreams
QPro configuration PROM. Radiation-hardened.
QPro configuration PROM. SMD number 5962-9951401NXB.
QPro configuration PROM. SMD number 5962-9951401QYA
QPro Series Configuration PROMs (XQ) including Radiation-Hardened Series (XQR) 1M X 1 CONFIGURATION MEMORY, PDSO20
1M X 1 CONFIGURATION MEMORY, CQCC44
|
Xilinx, Inc.
XILINX INC
|
| XC18V02PC44C XC18V02VQ44C XC18V512SO20C XC18V04PC4 |
Re-programmable 512Kb PROM, 64K X 8 CONFIGURATION MEMORY, 15 ns, PQFP44
Re-programmable 512Kb PROM, 64K X 8 CONFIGURATION MEMORY, 15 ns, PDSO20
In-System-Programmable Configuration PROMs
XC18V00 Series In-System-Programmable
XC18V00 Series In-System-Programmable
|
Xilinx, Inc.
|
| XC17256DDD8M |
QPRO Family of XC1700D QML Configuration PROMs
|
XILINX
|
| XC18V04VQ4 XC18V04 XC18V01PC2 XC18V01SO2 XC18V04VQ |
XC18V00 Series of In-system Programmable Configuration Proms
|
XILINX[Xilinx, Inc]
XILINX[Xilinx Inc]
|
| XCV50-4CS144C |
Platform Flash In-System Programmable Configuration PROMS
|
Xilinx
|
| XC17128DDD8M |
QPRO Family of XC1700D QML Configuration PROMs
|
Xilinx
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| UNR2225 UNR2226 UNR2227 UN2225 UN2226 UN2227 |
Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting
Silicon NPN epitaxial planar type
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| M76DW52003TA90ZT M76DW52003BA M76DW52003BA70ZT M76 |
SPECIALTY MEMORY CIRCUIT, PBGA73
32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
