PART |
Description |
Maker |
WS57C256F WS57C256F-35 WS57C256F-35C WS57C256F-35D |
-WS57C256F MILITARY HIGH SPEED 32K X 8 CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28 HIGH SPEED 32K x 8 CMOS EPROM 高2K的8的CMOS存储
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SGS Thomson Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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AT27C256 AT27C256R AT27C256R-12 AT27C256R-12JC AT2 |
256K 32K x 8 OTP CMOS EPROM 256K (128K x 8) OTP CMOS EPROM High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SOIC -40 to 85 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PQCC32 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDSO28 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PDIP28 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TVSOP -40 to 85 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TSSOP -40 to 85 8-Channel Analog Multiplexer/Demultiplexer 16-SSOP -40 to 85
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Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation] http://
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IDT70V658S15DR IDT70V657S10DRI IDT70V657S15DRI IDT |
Dual N-Channel Digital FET HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 高.3 128/64/32K × 36 ASYNCHRONO美国双端口静态RAM HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 32K X 36 DUAL-PORT SRAM, 10 ns, PQFP208 HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 32K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
|
Integrated Device Technology, Inc.
|
WS57C71C-3 WS57C71C-5 WS57C71C-55JI WS57C71C-55J W |
HIGH SPEED 32K x 8 CMOS PROM/RPROM 高2K的8的CMOS胎膜早破/ RPROM MILITARY HIGH SPEED 32K x 8 CMOS PROM/RPROM WS57C71C HIGH SPEED 32K X 8 CMOS PROM/RPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] N.A. ST Microelectronics
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IC61LV256- IC61LV256 IC61LV256-15TG IC61LV256-8TIG |
32K x 8 Hight Speed SRAM with 3.3V 32K x 8 Hight Speed SRAM with 3.3V 32K的8 Hight高速SRAM.3V ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Integrated Circuit Solu... Ecliptek, Corp. ICSI[Integrated Circuit Solution Inc]
|
IDT70V27S25BF IDT70V27S25BFI IDT70V27L25BF IDT70V2 |
HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 55 ns, PQFP100 Shaft; Style: 1 - light; Applicable Model: SE / SEFB
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
IDT70V07L25PFI |
HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 25 ns, PQFP80
|
Integrated Device Technology, Inc.
|
709179L12PF IDT709179L 709179L12PFI 709179L7PF 709 |
32K x 9 Sync, Dual-Port SRAM, PipeLined/Flow-Through HIGH-SPEED 32K X 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 32K X 9 DUAL-PORT SRAM, 9 ns, PQFP100
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
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Turbo IC
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IS61C256AL IS61C256AL-10J IS61C256AL-10JL IS61C256 |
32K X 8 HIGH-SPEED CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
AT28HC256N-90JI AT28HC256N AT28HC256N-12JI |
256 (32K x 8) High-speed Parallel EEPROM
|
ATMEL[ATMEL Corporation]
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