| PART |
Description |
Maker |
| CY7C1380BV25-150BGC CY7C1382BV25-133BGC CY7C1382BV |
512K x 36 / 1 Mb x 18 Pipelined SRAM
FUSE, FAST ACTING, 250MA; Current, fuse rating:250mA; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, SEMKO, UL, VDE; Current, breaking capacity AC:35A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse RoHS Compliant: Yes
FUSE, FAST ACTING, 5A; Current, fuse rating:5A; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, UL; Current, breaking capacity AC:50A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse type, blowing RoHS Compliant: Yes
FUSE, TIME DELAY, 100MA; Current, fuse rating:100mA; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, SEMKO, UL, VDE; Current, breaking capacity AC:35A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse RoHS Compliant: Yes
FUSE, FAST ACTING, 500MA; Current, fuse rating:500mA; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, SEMKO, UL, VDE; Current, breaking capacity AC:35A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse RoHS Compliant: Yes
FUSE, FAST ACTING, 2A; Current, fuse rating:2A; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, SEMKO, UL, VDE; Current, breaking capacity AC:35A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse type, RoHS Compliant: Yes
|
Cypress Semiconductor Corp.
|
| G35160 |
35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE
|
Won-Top Electronics
|
| MD35160 |
35A HIGH VOLTAGE MOTOROLA TYPE PRESS-FIT DIODE
|
Won-Top Electronics
|
| 2N3651 2N3652 2N3650 2N3653 |
35A silicon controlled rectifier. Vrsom 300V.
35A silicon controlled rectifier. Vrsom 400V.
35A silicon controlled rectifier. Vrsom 150V.
35A silicon controlled rectifier. Vrsom 500V.
|
General Electric Solid State
|
| STB3NA80 4229 STB3NA80T4 |
Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MG75Q2YS40 E002411 |
WIRE, ETFE, TEFZEL, 12AWG, WHITE, 100M; Area, conductor CSA:3.022mm2; Conductor make-up:37/0.320; Voltage rating, AC:600V; Current rating:35A; Colour, primary insulation:White; Material, primary insulation:Tefzel; Diameter, RoHS Compliant: Yes
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2010.0013 |
Miniature Telecom fuse available in 10 piece blisterTape; Voltage Rating: 250V; Current Rating: 0.4A; Characteristic: TIME LAG BLOW ELECTRIC FUSE, 0.4A, 250VAC, 35A (IR), INLINE/HOLDER
|
SCHURTER AG
|
| Q62702-C2134 BCP28 BCP48 Q62702-C2135 |
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BC516 Q62702-C944 |
PNP Silicon Darlington Transistor (High current gain High collector current)
From old datasheet system
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BDP954 Q62702-D1340 BDP952 BDP956 Q62702-D1344 Q62 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
|
