| PART |
Description |
Maker |
| FTC41041-20JILF FTC41041-15JILF FTC41041-12JILF FT |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
|
Force Technologies Ltd
|
| IDT71V416S IDT71V416S15Y IDT71V416S20Y IDT71V416S1 |
3.3V CMOS STATIC RAM 4 MEG (256K x 16-BIT)
|
Integrated Device Techn...
IDT[Integrated Device Technology]
|
| MT47H32M16HR-25E MT47H64M8CF-25EG |
DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| MT48LC32M16A2P-75ITC |
SDR SDRAM MT48LC128M4A2 ?32 Meg x 4 x 4 banks MT48LC64M8A2 ?16 Meg x 8 x 4 banks MT48LC32M16A2 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| MT48H16M16LFB5-8G MT48H8M32LFB5-8G MT48H16M16LFB5- |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| MT48H16M16LF MT48H8M32LF MT48H16M16LFB5-8ITG MT48H |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
|
Micron Technology, Inc.
http://
|
| MT48H32M16LFCM-8L |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| R01AN1504EJ0100 |
Using the DTC to Perform Continuous Clock
|
Renesas Electronics Corporation
|
| KM641001B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V53C104Z-10L V53C104K-10 V53C104K-10L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 高性能，低功耗，256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| IS61LV2568-8T IS61LV2568-8K IS61LV2568 IS61LV2568- |
x8 SRAM
256K x 8 HIGH-SPEED CMOS STATIC RAM 256K X 8 STANDARD SRAM, 15 ns, PDSO44
256K x 8 HIGH-SPEED CMOS STATIC RAM 256K X 8 STANDARD SRAM, 15 ns, PDSO36
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
|
| 1760 |
WOODHEAD? TESTERS PERFORM BASIC-VERIFICATION AND MULTIFUNCTION WIRE TESTING WITH COMPACT, SIMPLE-TO-USE DEVICES THAT
|
Molex Electronics Ltd.
|
