PART |
Description |
Maker |
LH28F160S5 LH28F160S5-L10 LH28F160S5-L70 LH28F160S |
LH28F160S5D-L70 16MBIT (2MB x 8/1MB x 16)Smart 5 Flash Memory 16-MBIT(2MBx8/MBx16)Smart 5 Flash MEMORY 16-MBIT (2MBx8/1MBx16) Smart 5 Flash MEMORY
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SHARP[Sharp Electrionic Components]
|
M29W160EB70N1 M29W160EB70N1T M29W160EB70N6 M29W160 |
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位(含2Mb x8兆x16插槽,引导块3V电源快闪记忆 CAP 3300UF 6.3V ELECT FC RADIAL 16兆位(含2Mb x8兆x16插槽,引导块V电源快闪记忆 16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory 16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY 70ns; V(in/out): -0.6 to 0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory
|
STMicroelectronics N.V. ST Microelectronics SGS Thomson Microelectronics
|
ST25E16 ST24E16 ST24EB3TR ST24EB6TR ST24EM1TR ST24 |
SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 16K (2K X 8) EEPROM 16 Kbit Serial I 2 C EEPROM with Extended Addressing (ST24E16 / ST25E16) 16 Kbit Serial I2C EEPROM with Extended Addressing CONFIGURATION DEVICE, 16MBIT,UBGA88; Memory type:Configuration FLASH; Interface type:Serial, Parallel; Memory size:16Mbit; Memory configuration:2MB; Time, access:90ns; Frequency:66.7MHz; Temp, op. min:0(degree C); Temp, op. RoHS Compliant: Yes 16 Kbit Serial I2C EEPROM with Extended Addressing 16千位串行I2C EEPROM,带有扩展寻址
|
http:// ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
GS72116TP-10 GS72116TP-15 GS72116TP GS72116J-15 GS |
15ns 128K x 16 2Mb asynchronous SRAM 8ns 128K x 16 2Mb asynchronous SRAM 10ns 128K x 16 2Mb asynchronous SRAM 12ns 128K x 16 2Mb asynchronous SRAM
|
GSI[GSI Technology]
|
M48Z2M1Y M48Z2M1Y-70PL1 M48Z2M1Y-70PL9 M48Z2M1YPL |
16 Mb (2Mb x 8) ZEROPOWER SRAM 122 x 32 pixel format, Compact LCD size 16 Mb 2Mb x 8 ZEROPOWER SRAM
|
SGS Thomson Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
LH28F160S5HNS-S1 |
Flash Memory 16Mbit (2Mbitx8/1Mbitx16)
|
Sharp Electrionic Components
|
MT55L64L32P1 MT55L128L18P |
64K x 32,3.3V I/O, ZBT SRAM( 2Mb,3.3V输入/输出,静态RAM) 128K x 18, 3.3V I/O, ZBT SRAM(2Mb,3.3V输入/输出,静态RAM) 128K的18.3V的I / O的ZBT SRAM的(处理器,3.3V的输输出,静态内存)
|
Micron Technology, Inc.
|
LH28F016SUHT LH28F016SUHT-10 |
16Mbit(1Mbit x 16, 2Mbit x 8) 5V Single Voltage Flash Memory 16Mbit(1Mbit x 16/ 2Mbit x 8) 5V Single Voltage Flash Memory
|
SHARP[Sharp Electrionic Components]
|
ES29DL160EB-12TG ES29DL320ET-80TG ES29DL640ET-80TG |
16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
优先(苏州)半导体有限公
|
LH28F016SUHT-10 |
16Mbit(1Mbit x 16, 2Mbit x 8) 5V Single Voltage Flash Memory 16兆(容量Mbit × 16Mbit的8V单电压闪
|
Sharp, Corp.
|
M28W320EB-ZB M28W320EB-ZBT M28W320EBB M28W320EBB10 |
32MBIT (2MB X 16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
MT58L64L32FT-6.8 MT58L64L36FT-6.8 MT58L64V32FT-6.8 |
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的:128K的1864K的x 32/36流通过SYNCBURST的SRAM 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的:128K的184K的x 32/36流通过SYNCBURST的SRAM
|
Micron Technology, Inc.
|