PART |
Description |
Maker |
LC321664AJ LC321664AM LC321664AT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode / Byte Write 1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd.
|
LC321664AJ LC321664AM LC321664AT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|
LC321667BJ LC321667BM LC321667BT-70 LC321667BT-80 |
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode / Byte Write 1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 TC5565APL T |
65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
LC35V256ET-70W LC35V256EM LC35V256EM-70W |
256K (32K words x 8 bits) SRAM Control pins: OE and CE 256K2K字8位)的SRAM控制引脚:OE和行政长
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
MB85410 |
65536 Words x 8-Bit
|
Fujitsu
|
MB85411 |
65536 Words x 9-Bit
|
Fujitsu
|
EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory
|
EDS2532JEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
Elpida Memory, Inc.
|
EDD2516AKTA-6B-E EDD2516AKTA-7A-E EDD2516AKTA-7B-E |
256M bits DDR SDRAM (16M words x 16 bits)
|
Elpida Memory
|
EDD1232AABH-7A-E EDD1232AABH EDD1232AABH-6B-E |
128M bits DDR SDRAM (4M words x 32 bits)
|
ELPIDA[Elpida Memory]
|