| PART |
Description |
Maker |
| MAPLST0822-002PP |
RF Power Field Effect Transistor LDMOS, 800-2200 MHz, 2W, 28V
|
Tyco Electronics
|
| PTF080101M |
High Power RF LDMOS Field Effect Transistor 10 W, 450 ?960 MHz
|
Infineon Technologies AG
|
| PTFA220041M |
High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz
|
Infineon Technologies AG
|
| PTFA220121M |
High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz
|
Infineon Technologies AG
|
| MAPLST1820-090CF |
RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 90W, 26V
|
Tyco Electronics
|
| MAPLST1900-060CF |
RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 60W, 26V
|
Tyco Electronics
|
| MAPLST2122-090CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
|
Tyco Electronics
|
| PTF10100 |
165 Watts/ 860-900 MHz LDMOS Field Effect Transistor
165 Watts 860-900 MHz LDMOS Field Effect Transistor
165 Watts, 860-900 MHz LDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 |
RF Power Field Effect Transistors
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
