| PART |
Description |
Maker |
| IRFB61N15D |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=150V/ Rds(on)max=0.032ohm/ Id=50A)
|
International Rectifier
|
| MJE15028 MJE15029 MJE15030 MJE15031 |
POWER TRANSISTORS(8.0A /120-150V /50W)
POWER TRANSISTORS(8.0A/120-150V/50W)
POWER TRANSISTORS(8.0A120-150V50W)
POWER TRANSISTORS(8.0A,120-150V,50W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| RFL4N12 RFL4N15 |
4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs 4000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF
4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs
|
Intersil, Corp.
Intersil Corporation
|
| FQA36P15 |
150V P-Channel MOSFET 36 A, 150 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
150V P-Channel QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 16CYQ150C |
16A 150V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package
SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 150V
|
IRF[International Rectifier]
|
| IRF3415L IRF3415LPBF IRF3415S IRF3415SPBF IRF3415S |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
| FQPF45N15V2 FQP45N15V2 |
150V N-Channel Advanced QFET V2 series
150V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| 12CGQ150 |
35A 150V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package
SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35A, 150V
|
IRF[International Rectifier]
|
| FDP2570 FDB2570 |
150V N-Channel PowerTrench MOSFET 22 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
150V N-Channel PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| IRF7465 |
Power MOSFET(Vdss=150V/ Id=1.9A)
Power MOSFET(Vdss=150V, Id=1.9A)
|
IRF[International Rectifier]
|
