| PART |
Description |
Maker |
| 1MBH05D-060 |
Ratings and characteristics of Fuji IGBT
|
FUJI[Fuji Electric]
|
| M10UFG M10SG M10FF3 M10FF5 |
ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS
|
VMI[Voltage Multipliers Inc.]
|
| 1MBH10D-120 |
Ratings and characteristics of Fuji IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| 1MBH08D-120 |
Ratings and characteristics of Fuji IGBT
|
FUJI[Fuji Electric]
|
| 1MBH15D-060 |
Ratings and characteristics of Fuji IGBT
|
FUJI[Fuji Electric]
|
| ERW03-060 |
Ratings and characteristics of Fuji silicon diode
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| ERW05-060 |
Ratings and characteristics of Fuji silicon diode
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| ERW11-120 |
Ratings and characteristics of Fuji silicon diode
|
http://
FUJI[Fuji Electric]
|
| FTD1200 |
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DIODE TRIO VALEO TYPE Low forward voltage drop High reliability
|
FCI connector
First Components International
|
| 1MBH10D-060 |
Ratings and characteristics of Fuji IGBT 30 A, 600 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| C67078-A1605-A2 BUZ48 |
main ratings
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
