| PART |
Description |
Maker |
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| KTC4793 |
General Purpose Transistor
TRIPLE DIFFUSED NPN TRANSISTOR(POWER AMPLIFIER DRIVER STAGE AMPLIFIER)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| 2SD2449 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications
|
TOSHIBA
|
| CJD32C CJD31C |
SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch
COMPLEMENTARY SILICON POWER TRANSISTOR
From old datasheet system
|
CENTRAL[Central Semiconductor Corp]
|
| 2SB1557 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC5242 |
Power Amplifier Application NPN Transistor(功率放大器用NPN晶体 功率放大器应用NPN晶体管（功率放大器用npn型晶体管
NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)
|
Toshiba, Corp.
|
| 2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC2982 E000777 |
TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管（STOROBO闪光，中等功率放大器应用
TRANSISTOR (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| KSA614YTSTU KSA614 KSA614Y KSA614YTU KSA614O KSA61 |
Low Frequency Power Amplifier
PNP Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Bulk 3 A, 55 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| 2SC3624 2SC3624A 2SC3624A-T1B 2SC3624-T1B 2SC3624A |
BJT 双极型晶体管
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
AUDIO FREQUENCY AMPLIFIER/ SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC, Corp.
NEC[NEC]
|
